 課程名稱 |
【竹科管理局線上補助課程】功率IGBT元件工程與電氣特性介紹 |
| 課程內容 |
1.Power IGBT Market 2.Physics & Engineering for Power Devices - Power BJT - MOS Transistor - Vertical HV Devices (BJT, Power MOSFET, IGBT) 3.Power Device: Tyristor - Parasitic SCR in an IGBT - I-V Characteristics of an SCR - Embedded SCR in HV and LV Processes - Thyristors in Power Electronics - How to Avoid the LU Effect ? 4.Device Fabrication Trend of Power IGBTs - Device Structures of IGBTs - Advantages of SiC/GaN (WBG) Power Devices - IGBT Backside Thinning and Backside Implant - How to Avoid the LU Effect in an IGBT? 5.Characteristics of Power IGBTs - Maximum rating values - Thermal Characteristics - SOA - Dynamic Specifications - Switching Characteristics and Performances |
| 先修課程 |
| 上課日期 | 上課時段 | 授課老師 | 報名截止日 | 上課地點 | 報名 | 課程費用 |
|---|---|---|---|---|---|---|
| 20241110-20241117 | 週日，09:00-16:00 | 自強基金會 Jack Sunny Che | 20241107 | 網路線上 | 報名已截止 | 1200 |